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17-02-2010, 10:55 PM

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Sorry , the ppt of nano ram is not available. You can find the full report of NANO RAM in this thread:
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05-10-2012, 03:31 PM


.docx   Nano.docx (Size: 92 KB / Downloads: 24)


The first generation Nantero NRAM technology was based on a three-terminal semiconductor device where a third terminal is used to switch the memory cell between memory states. The second generation NRAM technology is based on a two-terminal memory cell. The two-terminal cell has advantages such as a smaller cell size, better scalability to sub-20 nm nodes (see semiconductor device fabrication), and the ability to passivate the memory cell during fabrication.
Nantero's technology is based on a well-known effect that in a non-woven fabric matrix of carbon nanotubes (CNTs), crossed nanotubes can either be touching or slightly separated depending on their mechanical state. When close to each other, the carbon nanotubes come under the influence of Van der Waal's forces. Each NRAM "cell" consists of an interlinked network of CNTs located between two electrodes as illustrated in Fig. 1. The CNT fabric is located between two metal electrodes, which is defined and etched by photolithography, and forms the NRAM cell.


NRAM has a density, at least in theory, similar to that of DRAM. DRAM consists of a number of capacitors, which are essentially two small metal plates with a thin insulator between them. NRAM is similar, with the terminals and electrodes being roughly the same size as the plates in a DRAM, the nanotubes between them being so much smaller they add nothing to the overall size. However it seems there is a minimum size at which a DRAM can be built, below which there simply not enough charge is being stored on the plates . NRAM appears to be limited only by the current state of the art in lithography. This means that NRAM may be able to become much denser than DRAM, meaning that it will also be less expensive. Additionally, unlike DRAM, NRAM does not require power to "refresh" it, and will retain its memory even after power is removed. Thus the power needed to write and retain the memory state of the device is much lower than DRAM, which has to build up charge on the cell plates. This means that NRAM will not only compete with DRAM in terms of cost, but will require much less power to run, and as a result also be much faster because write performance is largely determined by the total charge needed. NRAM can theoretically reach performance similar to SRAM, which is faster than DRAM but much less dense, and thus much more expensive.

Comparison with other Types of Non-Volatile Memory

Compared other NVRAM ("Non-Volatile RAM") technologies, NRAM has several advantages. The most common form of NVRAM today is FLASH RAM. In Flash Memory, each cell resembles aMOSFET transistor with a control gate (CG) modulated by a floating gate (FG) interposed between the CG and the FG. The FG is surrounded by an insulating dielectric, typically an oxide. Since the FG is electrically isolated by the surrounding dielectric, any electrons placed on the FG will be trapped on the FG which screens the CG from the channel of the transistor and modifies the threshold voltage (VT) of the transistor. By writing and controlling the amount of charge placed on the FG, the FG controls the conduction state of the MOSFET FLASH device depending on the VT of the cell selected.

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