Novel semiconductor device
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03-08-2010, 09:31 AM

I want the different topics which related to novel semiconductor devices.
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23-09-2010, 10:49 AM

More Info About Novel semiconductor device

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One of the "fundamental" problems in the continued scaling of MOSFETs is the 60 mV/decade room temperature limit in subthreshold slope. In this paper, we report initial studies on a new kind of transistor, the I-MOS. The I-MOS uses modulation of the breakdown voltage of a gated p-i-n structure in order to switch from the OFF to the ON state and vice versa. Since impact-ionization is an abrupt function of the electric field (or the carrier energy), simulations show that the device has a subthreshold slope much lower than kT/q. Simulations also show that it is indeed possible to make complementary circuits with switching speeds comparable to or exceeding CMOS. Experimental results on a silicon based prototype verify the basic concept and show very steep subthreshold slopes with high speed turn-on and turn-off. Lower bandgap materials are also being investigated to reduce the value of the breakdown voltage and permit lower voltage operation.

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This paper appears in: Electron Devices Meeting, 2002. IEDM '02. Digest. International
Issue Date: 2002
On page(s): 289 - 292
Print ISBN: 0-7803-7462-2
INSPEC Accession Number: 7509297
Digital Object Identifier: 10.1109/IEDM.2002.1175835
Date of Current Version: 06 February 2003
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29-09-2010, 11:48 AM

.doc   Semiconductor device.doc (Size: 82 KB / Downloads: 40)
Semiconductor device

By far, silicon (Si) is the most widely used material in semiconductor devices. Its combination of low raw material cost, relatively simple processing, and a useful temperature range make it currently the best compromise among the various competing materials. Silicon used in semiconductor device manufacturing is currently fabricated into boules that are large enough in diameter to allow the production of 300 mm (12 in.) wafers.
Germanium (Ge) was a widely used early semiconductor material but its thermal sensitivity makes it less useful than silicon. Today, germanium is often alloyed with silicon for use in very-high-speed SiGe devices; IBM is a major producer of such devices.
Gallium arsenide (GaAs) is also widely used in high-speed devices but so far, it has been difficult to form large-diameter boules of this material, limiting the wafer diameter to sizes significantly smaller than silicon wafers thus making mass production of GaAs devices significantly more expensive than silicon.
Silicon carbide (SiC) has found some application as the raw material for blue light-emitting diodes (LEDs) and is being investigated for use in semiconductor devices that could withstand very high operating temperatures and environments with the presence of significant levels of ionizing radiation. IMPATT diodes have also been fabricated from SiC.
Various indium compounds (indium arsenide, indium antimonide, and indium phosphide) are also being used in LEDs and solid state laser diodes. Selenium sulfide is being studied in the manufacture of photovoltaic solar cells.


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